Innovation

      Innovations  

- Monitoring of photon emission from emitter-base junction of bipolar silicon transistors

Physics:  "avalanche light emission"

IEEE Trans. Elect. Dev. 46, 1234-39 (1999), M. de la Bardonnie, D. Jiang, S.E. Kerns, D.V. Kerns, P. Mialhe,

J.P. Charles, A. Hoffmann

 

- Development of a silicon IR diode

Physics: "nano-layer degradation to increase recombination processes in silicon devices"

Microelectronics International  26, 260-63 (2005),  M. El Tahchi, E. Nassar, P. Mialhe

 

- Silicon  for optoelectronic (review article)

J. Electron Devices 6, 170-73 (2008), P. Mialhe, H. Toufik, M. El Tahchi, N. Toufih, W. Tazibt

 

              

- Detection of fast neutrons

Physics:  "sensitivity of N-MOSFET saturation current on neutron fluence"

Microelectronics International  19, 19-22 (2002), C. Salamé, P. Mialhe, J.P. Charles, A. Khoury              

 

- Making faster switching-off MOSFET devices

Physics:  "defect injection and accumulation of positive charges in the bulk oxide"

Microelectronics Reliability 47, 1296-99 (2007), R. Habchi, C. Salamé, A. Khoury, P. Mialhe

 

- A parameter for reliability evaluation for bipolar transistors

Physics: "evolution of junction parameters during degradation"

Microelectronics Reliability 48, 348-53 (2008), W. Tazibt,  P. Mialhe, J.P. Charles, M.A. Belkhir

- Fusion power for the future

Physics: "La fusion nucléaire comme nouvelle source d'énergie"

Revue Internationale d'Héliotechnique 43, I-IV (2011), P. Mialhe